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Proceedings Paper

Submicron BCDMOS process with extended LDMOS safe-operating-area by optimizing body current
Author(s): Suk-Kyun Lee; Yong-Cheol Choi; S. H. Lee; T. H. Kwon; Cheol-Joong Kim; Hyunsoon Kang; Changsub Song
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Paper Abstract

A 20V submicron BCDMOS process is presented with extended LDMOS SOA (Safe-Operating-Area) for smart power applications by optimizing body-current. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrier injection phenomenon. The first peak shows the appearance of weakly impact ionization related to the device degradation and the second peak shows the occurrence of snap-back phenomenon predicting device destruction, respectively. In the present paper, we investigated the HE-SOA (Hot-Electron-Limited SOA) and Electrical SOA using two peaks of body current in LDMOS transistors with submicron BCD process.

Paper Details

Date Published: 15 October 2001
PDF: 8 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444681
Show Author Affiliations
Suk-Kyun Lee, Fairchild Korea Semiconductor Co. (South Korea)
Yong-Cheol Choi, Fairchild Korea Semiconductor Co. (South Korea)
S. H. Lee, Fairchild Korea Semiconductor Co. (South Korea)
T. H. Kwon, Fairchild Korea Semiconductor Co. (South Korea)
Cheol-Joong Kim, Fairchild Korea Semiconductor Co. (South Korea)
Hyunsoon Kang, Fairchild Korea Semiconductor Co. (South Korea)
Changsub Song, Fairchild Korea Semiconductor Co. (South Korea)


Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology

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