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Proceedings Paper

Lateral bipolar transistor on SOI with dual-sidewalls structure
Author(s): Yong Cai; Lichun Zhang
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Paper Abstract

In this paper, a novel lateral bipolar transistor on silicon on insulator material is proposed. Dual-sidewalls technology, which is used in some vertical bipolar devices, is applied in this transistor. The first poly-Si sidewall decreases parasitic Cbc capacitor to the lowest level. The second insulator sidewall is used to separate high concentration emitter from base. Different sidewall width will result in different width of intrinsic base. That means thin intrinsic base could be easily achieved by adjusting insulator sidewall. There are other key technologies also, such as: angled implantation, self-aligned silicide. Results of processes simulation show that all the processes are available, the expected structure and profiles are controllable. Device simulation gives an excellent performance: fT is over 30 GHz, DC current gain is over 20. This type of lateral bipolar transistor with high performances should be a potential competitor in RF devices & ICs, and should meet the needs of SOI-BiCMOS ICs.

Paper Details

Date Published: 15 October 2001
PDF: 5 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444678
Show Author Affiliations
Yong Cai, Peking Univ. (China)
Lichun Zhang, Peking Univ. (China)

Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology
Qin-Yi Tong; Ulrich M. Goesele, Editor(s)

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