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Proceedings Paper

Debug of IC-card chips assisted by FIB and in-situ mechanical microprobing
Author(s): Xiao Dong Jiang; Xiang Hong Yu; Theodore R. Lundquist
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Paper Abstract

The value of mechanical micro-probes and FIB in IC design-debug is well understood. As device dimensions shrink, navigating micro-probes within a light microscope is almost impossible. SEM or FIB, which have higher resolution as well as greater depth of focus, overcome this limitation. FIB is, also, preferred for DUT probe-point creation because its higher milling resolution capability can provide better access to lower level metallizations. IC-card chips present an unique challenge; the backside of these are often insulated so grounding must occur on the exposed front-side. Further, because these IC-card chips are small, very careful setups are required before undertaking FIB modifications. Micro-probes within the FIB chamber solved this problem. Three micro-probes were used to stimulate the chip (input-clock, ground and power) with a fourth probe used to measure output nodes. Requested FIB modifications, including rewiring of poly-silicon traces, were completed. Contacting poly-silicon requires FIB-assisted XeF2 etching through the inter-level dielectric and both fast termination and removal of XeF2 from the chamber upon poly-silicon exposure. The technique for exposing poly-silicon is described in detail. The synergy of mechanical micro-probes within the FIB chamber benefited both techniques in the design-debug task. We summarize various IC-card packaging styles and requirements to ground, micro-probe, and establish a debug platform.

Paper Details

Date Published: 15 October 2001
PDF: 6 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444667
Show Author Affiliations
Xiao Dong Jiang, Schlumberger Semiconductor Solutions (China)
Xiang Hong Yu, National ASIC Technology Advanced Ctr. (China)
Theodore R. Lundquist, Schlumberger Probe Systems (United States)


Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology

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