Share Email Print

Proceedings Paper

Quantum transport model for sub-100 nm CMOS devices
Author(s): Zhiping Yu; D. W. Yergeau; Robert W. Dutton; A. Svizhenko; M. P. Anantram
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Even at room temperature, sub-100 ,nm CMOS devices are strongly affected by quantum mechanical effects. In addition to commonly-known energy quantization in the channel, a charge dipole is observed to appear in the poly-gate, which shifts the threshold voltage in a different way from channel quantization. Moreover, due to the multi-dimensional nature of the structure, conventional Schrodinger/Poisson's equation solutions in 1D are no longer adequate for predicting the device characteristics. In this paper, two macroscopic, multi-dimensional quantum transport models, density gradient (DG) and non-equilibrium Green's function (NEGF), are discussed. Validity and application scope are established through comparing to measured data and benchmarking with MIT well-tempered MOSFETs (wtm25 and 90 nm, respectively). It is shown both qualitatively and quantitatively that quantum effects are now required in profile calibration and inverse modeling.

Paper Details

Date Published: 15 October 2001
PDF: 6 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444663
Show Author Affiliations
Zhiping Yu, Stanford Univ. and Tsinghua Univ. (China) (United States)
D. W. Yergeau, Stanford Univ. (United States)
Robert W. Dutton, Stanford Univ. (United States)
A. Svizhenko, NASA Ames Research Ctr. (United States)
M. P. Anantram, NASA Ames Research Ctr. (United States)

Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology
Qin-Yi Tong; Ulrich M. Goesele, Editor(s)

© SPIE. Terms of Use
Back to Top