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Proceedings Paper

Preparation of the SnO2 gate pH-ISFET by sol gel technology
Author(s): Jung Chuan Chou; Yii Fang Wang
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Paper Abstract

In this paper, the sol-gel prepared SnO2 thin film is first applied for the pH sensing. We use the SnCl2(DOT)2H2O as the precursor. It is cheaper than other methods. The resulting solution is dropped on the gate of the SiO2 gate pH-ISFET (ion sensitive field effect transistor). After baking, the thin film will convert to SnO2. We also use the thermal evaporation system to prepare the SnO2 gate MOSFET. Then, we use the Keithley 236 instrument to measure the IDS-VG curves of the SnO2 gate MOSFET and pH-ISFET for the different pH buffer solutions. Since the MOSFET and pH-ISFET are fabricated on the same silicon wafer, the properties of these devices are identical. Therefore, we can use the experimental results and theoretical model of the pH-ISFET to find the pH sensitivity and pHPZC (pH at the point of zero charge) of the sol-gel prepared SnO2 gate pH-ISFET, which are about 57.36 mV/pH and 11.3, respectively.

Paper Details

Date Published: 15 October 2001
PDF: 8 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444656
Show Author Affiliations
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Yii Fang Wang, National Yunlin Univ. of Science and Technology (Taiwan)

Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology
Qin-Yi Tong; Ulrich M. Goesele, Editor(s)

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