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Proceedings Paper

Sensitivity of the a-C:H gate pH-ISFET
Author(s): Jung Chuan Chou; Hsjian-Ming Tsai
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Paper Abstract

The hydrogenated amorphous carbon (a-C:H) contains significant fractions of sp3 type C bondings, giving them attractive physical and mechanical properties, some similar to a certain extent to the diamond. Otherwise, the dielectric constant of the a-C:H films covers the range of 2.5 - 6, and the a-C:H also can be used for the protective and isolated layer. In this paper, we study the sensitivity of the a-C:H applied to the pH-ISFET (ion sensitive field effect transistor). The a- C:H gate pH-ISFET devices were prepared by the plasma-enhanced low pressure chemical vapor deposition (PE-LPCVD). The sensitivity is determined by the IDS - VGS and C-V curves shift in the various pH buffer solutions. We can also measure the pH at zero charge point (pHpzc) for the a-C:H gate pH-ISFET.

Paper Details

Date Published: 15 October 2001
PDF: 10 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444655
Show Author Affiliations
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Hsjian-Ming Tsai, National Yunlin Univ. of Science and Technology (Taiwan)

Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology
Qin-Yi Tong; Ulrich M. Goesele, Editor(s)

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