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Proceedings Paper

Characterization of wavelength offset for optimization of deep-UV stepper performance
Author(s): Susan K. Jones; Bruce W. Dudley; Charles R. Peters; Mark D. Kellam; Edward K. Pavelchek
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Paper Abstract

A combination of metrology techniques was employed to fine tune the wavelength setting of a 248 nm excimer laser stepper to optimize performance. Scanning electron microscopy was used to document local resolution, proximity effects, and astigmatism, while GCA SMARTSETR and electrical resistance techniques were used to examine full field effects. Using the combined metrology methodologies, the authors documented the decrease in proximity effect, improvement in resolution, and increase in absolute lens distortion with negative shifts in laser wavelength setting, with a slight differential in the setting required to minimize horizontal versus vertical proximity effect and astigmatism. A wavelength offset of -2.3 angstroms from the nominal stepper setup wavelength was determined to be the best operating wavelength for these applications.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44465
Show Author Affiliations
Susan K. Jones, Microelectronics Ctr. of North Carolina (United States)
Bruce W. Dudley, Microelectronics Ctr. of North Carolina (United States)
Charles R. Peters, Microelectronics Ctr. of North Carolina (United States)
Mark D. Kellam, Microelectronics Ctr. of North Carolina (United States)
Edward K. Pavelchek, Shipley Co., Inc. (United States)


Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)

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