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Proceedings Paper

10-Gb/s external modulator module using capacitive and inductive peaking technology
Author(s): Bo Pan; Jianjun Gao; Baoxin Gao
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Paper Abstract

The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the fT of HEMT device used in driver module reduce evidently from 54GHz to 35GHz.

Paper Details

Date Published: 16 October 2001
PDF: 6 pages
Proc. SPIE 4603, Fiber Optics and Optoelectronics for Network Applications, (16 October 2001); doi: 10.1117/12.444575
Show Author Affiliations
Bo Pan, Tsinghua Univ. (China)
Jianjun Gao, Tsinghua Univ. (China)
Baoxin Gao, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 4603:
Fiber Optics and Optoelectronics for Network Applications
Jian Liu; Zhigong Wang, Editor(s)

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