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Proceedings Paper

Microstructure of oxygen-rich silicon oxynitride
Author(s): Yaping Dan; Ruifeng Yue; Yan Wang; Yongzhao Yao; Li-Tian Liu
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Paper Abstract

A detailed study is carried out on four oxygen-rich silicon oxynitride samples as an as-deposited one and other three same ones annealed at 600 degree(s), 750 degree(s) and 900 degree(s) respectively by Infrared spectroscopy (IR) and X-photoelectron spectroscopy (XPS). It is shown that the as-deposited sample consists of configurations as SiNx (xequals1,2,3,4), OnSi$4--n)-NH (nequals0,1,2,3), Si-O4, Si-OH, N-OH, SiN-O and SiNequalsO. With the annealing temperature rising, other configurations diminish or disappear and thus the microstructure mainly consists of O3Si-NH and Si-O4. As the temperature steps higher to 900 degree(s), most of H is released, leading to the appearance of a great amount of O3SiN- with a N dangling bonding, thus a sharp increase in the inner stress, and the reappearance of SiN-O, SiNequalsO and SiN configurations helps to compensate the inner stress.

Paper Details

Date Published: 16 October 2001
PDF: 4 pages
Proc. SPIE 4603, Fiber Optics and Optoelectronics for Network Applications, (16 October 2001); doi: 10.1117/12.444560
Show Author Affiliations
Yaping Dan, Tsinghua Univ. (China)
Ruifeng Yue, Tsinghua Univ. (China)
Yan Wang, Tsinghua Univ. (China)
Yongzhao Yao, Tsinghua Univ. (China)
Li-Tian Liu, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 4603:
Fiber Optics and Optoelectronics for Network Applications

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