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Proceedings Paper

Statistical approach to optimizing advanced low-voltage SEM operation
Author(s): Peter J. Apostolakis
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Paper Abstract

The continuous reduction in the dimensions of IC features has resulted in the need for higher resolution metrology tools. Low voltage scanning electron microscopy has the advantages of offering high resolution and a large depth of field. In addition, its non-destructive nature yields itself to in-process metrology without sacrifice of product. In this investigation, an advanced field emission scanning electron microscope is employed in the determination of optimal conditions for the inspection and measurement of common device- grade thin films. Polysilicon and silicon nitride films are characterized using several statistical tools. A factorial design experiment is used to narrow the range of effective SEM conditions. Subsequent measurement batteries will address the stability of the film-SEM interaction over a series of measurements, and resolve the fine degrees in condition performance. A treatment of the long-term charging and dimensional growth effects is also included.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44453
Show Author Affiliations
Peter J. Apostolakis, National Semiconductor Corp. (United States)

Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)

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