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Proceedings Paper

Phase-shift mask pattern accuracy requirements and inspection technology
Author(s): James N. Wiley; Tao-Yi Fu; Takashi Tanaka; Susumu Takeuchi; Satoshi Aoyama; Junji Miyazaki; Yaichiro Watakabe
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Paper Abstract

Computer simulations and i-line phase shift lithography experiments with programmed 5X phase shift reticle defects were used to investigate the effect of opaque and phase-shift layer defects on sub-half-micron lines. Both the simulations and the experiments show that defects in the phase shift layer print larger than corresponding opaque defects, with 0.3-0.4 micrometers defects affecting sub-half-micron critical dimensions by more than the allowable 10%. Inspection of programmed phase shift defects with a prototype mask inspection system confirmed that the system finds the 0.3-0.4 micrometers phase shift defects critical to sub-half-micron lithography.

Paper Details

Date Published: 1 July 1991
PDF: 10 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44447
Show Author Affiliations
James N. Wiley, KLA Instruments Corp. (United States)
Tao-Yi Fu, KLA Instruments Corp. (United States)
Takashi Tanaka, KLA Technology Ctr. Ltd. (Japan)
Susumu Takeuchi, Mitsubishi Electric Corp. (Japan)
Satoshi Aoyama, Mitsubishi Electric Corp. (Japan)
Junji Miyazaki, Mitsubishi Electric Corp. (Japan)
Yaichiro Watakabe, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)

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