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Proceedings Paper

Phase-shift mask technology: requirements for e-beam mask lithography
Author(s): Steven K. Dunbrack; Andrew J. Muray; Charles A. Sauer; Richard L. Lozes; John L. Nistler; William H. Arnold; David F. Kyser; Anna Maria Minvielle; Moshe E. Preil; Bhanwar Singh; Michael K. Templeton
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Paper Abstract

Phase-shifted patterns (alternating, 90-degree, and chromeless) have been incorporated into a reticle layout, fabricated with a MEBESR III system, and evaluated experimentally at 365 nm using steppers with numerical aperture (NA) ranging from 0.4 to 0.48 and partial coherence ranging from 0.38 to 0.62. Test circuit layouts simulate actual circuit designs with critical dimensions ranging from 0.2 micrometers to 1.2 micrometers . These results, combined with experimental measurement of layer to layer registration and aerial image simulations, provide a first-order assessment of e-beam lithography requirements to support phase-shift mask technology.

Paper Details

Date Published: 1 July 1991
PDF: 13 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44444
Show Author Affiliations
Steven K. Dunbrack, Etec Systems, Inc. (United States)
Andrew J. Muray, Etec Systems, Inc. (United States)
Charles A. Sauer, Etec Systems, Inc. (United States)
Richard L. Lozes, Etec Systems, Inc. (United States)
John L. Nistler, Advanced Micro Devices, Inc. (United States)
William H. Arnold, Advanced Micro Devices, Inc. (United States)
David F. Kyser, Advanced Micro Devices, Inc. (United States)
Anna Maria Minvielle, Advanced Micro Devices, Inc. (United States)
Moshe E. Preil, Advanced Micro Devices, Inc. (United States)
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)
Michael K. Templeton, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)

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