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Proceedings Paper

Extending electrical measurements to the 0.5 µm regime
Author(s): Patrick M. Troccolo; Lynda Clark Hannemann-Mantalas; Richard A. Allen; Loren W. Linholm
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Paper Abstract

The purpose of this work was to extend the design criteria of electrical test structures to the half-micron linewidth region. At 0.5 micrometers , process limitations place constraints on the functionality and usefulness of electrical test structures based on conventional design criteria. In particular, small total variations from lens aberrations/distortions and proximity/corner rounding effects in the patterning of the smallest lines achievable (less than 0.5 micrometers ) can result in failure of the structure. This was particularly significant when orthogonal voltage taps at minimum design geometries were used. As geometries decrease in size and control over the process and equipment tightens, the intrinsic error in conventional structures increases as a percentage of the total measurement. The design criteria of these structures have been further modified and improved in order to address known lithographic limitations and establish a more process tolerant design. The resulting measurement precision accommodating these changes is discussed to provide the framework for achieving the highest practical performance attainable from both the test structure and the measurement system.

Paper Details

Date Published: 1 July 1991
PDF: 14 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44427
Show Author Affiliations
Patrick M. Troccolo, Intel Corp. (United States)
Lynda Clark Hannemann-Mantalas, Prometrix Corp. (United States)
Richard A. Allen, National Institute of Standards and Technology (United States)
Loren W. Linholm, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)

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