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Proceedings Paper

Large-displacement microactuators in deep reactive ion-etched single-crystal silicon
Author(s): Gabriel L. Smith; John M. Maloney; Lawrence Fan; Don L. DeVoe
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Paper Abstract

A comparison of three different large-displacement microactuator technologies fabricated by deep reactive ion etching (DRIE) in silicon-on insulator (SOI) substrates is presented. Electrothermal, curved electrode electrostatic, and combdrive electrostatic actuator designs are considered, with each actuator design capable of producing more than 100 mm of displacement. Analytic models for each actuator type are reviewed, and both theoretical and experimental data for fabricated devices are analyzed and compared with respect to displacement, force, and power consumption.

Paper Details

Date Published: 1 October 2001
PDF: 10 pages
Proc. SPIE 4559, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication, (1 October 2001); doi: 10.1117/12.443028
Show Author Affiliations
Gabriel L. Smith, Univ. of Maryland/College Park and Naval Surface Warfare Ctr. (United States)
John M. Maloney, Univ. of Maryland/College Park (United States)
Lawrence Fan, Naval Surface Warfare Ctr. (United States)
Don L. DeVoe, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 4559:
MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication
Henry Helvajian; Siegfried W. Janson; Franz Laermer, Editor(s)

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