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Proceedings Paper

Process strategies for ultradeep x-ray lithography at the Advanced Photon Source
Author(s): Derrick C. Mancini; Nicolai A. Moldovan; Ralu Divan; Francesco De Carlo; Judith Yaeger
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Paper Abstract

For the past five years, we have been investigating and advancing processing capabilities for deep x-ray lithography (DXRL) using synchrotron radiation from a bending magnet at the Advanced Photon Source (APS), with an emphasis on ultra-deep structures (1mm to 1cm thick). The use of higher-energy x-rays has presented many challenges in developing optimal lithographic techniques for high-aspect ratio structures: mask requirements, resist preparation, exposure, development, and post-processing. Many problems are more severe for high-energy exposure of thicker films than for sub-millimeter structures and affect resolution, processing time, adhesion, damage, and residue. A number of strategies have been created to overcome the challenges and limitations of ultra-deep x-ray lithography (UDXRL), that have resulted in the current choices for mask, substrate, and process flow at the APS. We describe our current process strategies for UDXRL, how they address the challenges presented, and their current limitations. We note especially the importance of the process parameters for use of the positive tone resist PMMA for UDXRL, and compare to the use of negative tone resists such as SU-8 regarding throughput, resolution, adhesion, damage, and post-processing.

Paper Details

Date Published: 28 September 2001
PDF: 8 pages
Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); doi: 10.1117/12.442984
Show Author Affiliations
Derrick C. Mancini, Argonne National Lab. (United States)
Nicolai A. Moldovan, Argonne National Lab. (United States)
Ralu Divan, Argonne National Lab. (United States)
Francesco De Carlo, Argonne National Lab. (United States)
Judith Yaeger, Argonne National Lab. (United States)

Published in SPIE Proceedings Vol. 4557:
Micromachining and Microfabrication Process Technology VII
Jean Michel Karam; John A. Yasaitis, Editor(s)

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