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Proceedings Paper

Improved microwave performance on low-resistivity Si substrates by introducing an oxidized porous Si interlayer
Author(s): Ziqiang Zhu; Yanling Shi; Yongfu Long; Peisheng Xin; Zongsheng Lai
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Paper Abstract

We propose the use of oxidized porous silicon as a low-loss substrate for the microwave devices. The oxidization of porous silicon is expected to increase the resistivity of Si surface layer and to reduce its effective dielectric loss, which would leads to a significant reduction of the nature loss of low-resisitivity (low-R) Si substrates under the microwave operation. In the present study, a significant improved microwave performance on low-R Si substrates has been demonstrated by measuring the microwave characteristics of coplanar waveguides fabricated on the Si substrates with thick oxidized porous surface layers.

Paper Details

Date Published: 28 September 2001
PDF: 6 pages
Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); doi: 10.1117/12.442977
Show Author Affiliations
Ziqiang Zhu, East China Normal Univ. (China)
Yanling Shi, East China Normal Univ. (China)
Yongfu Long, East China Normal Univ. (China)
Peisheng Xin, East China Normal Univ. (China)
Zongsheng Lai, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 4557:
Micromachining and Microfabrication Process Technology VII
Jean Michel Karam; John A. Yasaitis, Editor(s)

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