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Proceedings Paper

Etching rate control of mask material for XeF2 etching using UV exposure
Author(s): Koji Sugano; Osamu Tabata
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Paper Abstract

A new technique to control etching rates of mask materials during XeF2 etching was proposed. By exposing Si sample with SiO2 and Si3N4 as mask materials to UV light of 3 W/cm2 during XeF2 etching, the etching rates of SiO2 and Si3N4 were dramatically increased from 2.52 angstrom/pulse to 42.0 angstrom/pulse and from 27.3 angstrom/pulse to 403 angstrom/pulse, respectively. This new technique allows us to remove the mask material selectively and change the mask pattern by UV light exposure during in- situ etching process without additional photolithography step and opens a new silicon micromachining process for 3- dimensional fabrication. The multi-step Si structure was successfully realized by this technique.

Paper Details

Date Published: 28 September 2001
PDF: 6 pages
Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); doi: 10.1117/12.442931
Show Author Affiliations
Koji Sugano, Ritsumeikan Univ. (Japan)
Osamu Tabata, Ritsumeikan Univ. (Japan)

Published in SPIE Proceedings Vol. 4557:
Micromachining and Microfabrication Process Technology VII
Jean Michel Karam; John A. Yasaitis, Editor(s)

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