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Proceedings Paper

Investigation of hot electron emission in MOS structure under avalanche conditions
Author(s): Alexander G. Solonko
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Paper Abstract

There are a great attention to charge exchange proceses investigation in MIS (Metal-Insulator--Semiconductor) structure under strong field conditions last years because of creating a new generations of optoelectronic and microelectronic devices in silicon technology.The matrix type MIS avalanche pulsed spectro-photometer with spatial resolution ( Matrix-Pulsed-Spectro-Photometer) and the new type of Color Video Camera [1) could be such an examples working in a hot electrons injection ( from Si to 5102 regime.A lot of experiments have been performed to study this effect.To our viewpoint, Ning's experimental setup is the most interesting allowing to measure the absolute emission probability of electrons which were optically generated in the silicon depletion layer and accelerated toward the Si-Si02 interface [2).But in these experiments the substrate voltage range was restricted by 19V value that far below the avalanche process conditions in MISAPs (3]. It is the purpose of this paper to present a new experimental technique for emission probability investigation in MIS structure under avalanche conditions based on pulsed avalanche multiplication parameters extraction [3).This technique is a part of the complex experimental metod (41 for charge exchange investigation ( hot carriers transport in Si, generation-recombination processes in Si-Si02 interface, injection of hot carriers from Si into Si02, trapping and detrapping phenomena in Si02) in Avalanche-MIS-Structure (MISAS).

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1435, Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications, (1 July 1991); doi: 10.1117/12.44259
Show Author Affiliations
Alexander G. Solonko, Institute of High Temperature (Spain)

Published in SPIE Proceedings Vol. 1435:
Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications
Bryan L. Fearey, Editor(s)

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