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Proceedings Paper

Infrared intersubband emission in quantum nanostructures: recent trends and studies on Si-based structures
Author(s): P. K. Basu; Sumitra Ghosh; Bratati Mukhopadhyay
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Paper Abstract

There is a need to develop reliable, low cost and efficient semiconductor sources at mid and far IR. The sources at mid- IR using II-VI and Iv-Vi compounds suffer from some limitations. There are proposals to develop THz emitters using novel concepts, but their practical realization is not imminent at present. Quantum Cascade Lasers based on intersubband transitions in coupled Quantum Wells and Superlattices have recently been the subject of intensive research. In this paper the basic mechanisms of these lasers using III-V compound based type I and II structures are mentioned and some recent results are mentioned. The possibility of obtaining population inversion in Si based QWs is then explored. The calculated values of transparency current density and gain in coupled triple QW structures using Si and SiGe are reported.

Paper Details

Date Published: 25 September 2001
PDF: 9 pages
Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); doi: 10.1117/12.441324
Show Author Affiliations
P. K. Basu, Univ. of Calcutta (India)
Sumitra Ghosh, Univ. of Calcutta (India)
Bratati Mukhopadhyay, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 4417:
Photonics 2000: International Conference on Fiber Optics and Photonics

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