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Proceedings Paper

Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector
Author(s): G. S. Kar; S. Maikap; A. Dhar; Samit K. Ray
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Paper Abstract

Si/Si1-x-yGexCy/Si quantum well heterostructures grown by UHVCVD have been characterized in terms of structural and optical properties. The Schottky barrier height (SBH) and ideality factor of PtSi/p-Si1-x-yGexCy/Si diodes have been investigated using the current-voltage characteristics. The valence band offsets of Si/Si0.795Ge0.2C0.005 and Si/Si0.79Ge0.2C0.01 have been extracted using the Schottky diode measurements. A lower value of SBH has been observed in the ternary alloy compared to those in fully strained-Si1-xGex films indicating the potential of former for long wavelength IR detection.

Paper Details

Date Published: 25 September 2001
PDF: 6 pages
Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); doi: 10.1117/12.441320
Show Author Affiliations
G. S. Kar, Indian Institute of Technology Kharagpur (India)
S. Maikap, Indian Institute of Technology Kharagpur (India)
A. Dhar, Indian Institute of Technology Kharagpur (India)
Samit K. Ray, Indian Institute of Technology Kharagpur (India)


Published in SPIE Proceedings Vol. 4417:
Photonics 2000: International Conference on Fiber Optics and Photonics

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