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Proceedings Paper

Microstrip and suspended substrate GaAs bias-T
Author(s): A. D. Gopalaswamy; Utpal Das
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Paper Abstract

For photodiode bias-Ts in optoelectronic ICs > 20dB isolation is essential at 2.5-10 GHz for the photodiode to work at both 2.5 and 10 Gbit/s. Designed micro strip and suspended substrate GaAs bias-Ts show 30-140 dB isolation and measured values are approximately 30 dB in the 2.5-10 Ghz range.

Paper Details

Date Published: 25 September 2001
PDF: 8 pages
Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); doi: 10.1117/12.441316
Show Author Affiliations
A. D. Gopalaswamy, Indian Institute of Technology Kanpur (India)
Utpal Das, Indian Institute of Technology Kanpur (India)


Published in SPIE Proceedings Vol. 4417:
Photonics 2000: International Conference on Fiber Optics and Photonics

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