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Proceedings Paper

Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system
Author(s): J. P. Pachauri; Aji Baby; N. Chaturvedi; Harshad S. Kothari; Awatar Singh; Babu Ram Singh; P. N. Dixit; R. Bhattacharya
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Paper Abstract

Deep dry etching of silica is used for patterning of waveguides for optoelectronic applications. We report on the use of Electron Cyclotron Resonance/Reactive Ion Etching process for deep reactive ion etching of silica glass films using different fluorocarbons as etch gases. 1 by 8 splitter has been used as test structure for the optimization of the etch process. The optimized process parameters like RF/Microwave power, pressure and gas composition etc. for the above have been presented.

Paper Details

Date Published: 25 September 2001
PDF: 4 pages
Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); doi: 10.1117/12.441305
Show Author Affiliations
J. P. Pachauri, Central Electronics Engineering Research Institute (India)
Aji Baby, Central Electronics Engineering Research Institute (India)
N. Chaturvedi, Central Electronics Engineering Research Institute (India)
Harshad S. Kothari, Central Electronics Engineering Research Institute (India)
Awatar Singh, Central Electronics Engineering Research Institute (India)
Babu Ram Singh, Central Electronics Engineering Research Institute (India)
P. N. Dixit, National Physical Lab. (India)
R. Bhattacharya, National Physical Lab. (India)


Published in SPIE Proceedings Vol. 4417:
Photonics 2000: International Conference on Fiber Optics and Photonics

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