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Proceedings Paper

Solid state magnetic field sensors for micro unattended ground networks using spin dependent tunneling
Author(s): Mark Tondra; Catherine A. Nordman; Erik H. Lange; Daniel Reed; Albrect Jander; Seraphin Akou; James Daughton
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Paper Abstract

Micro Unattended Ground Sensor Networks will likely employ magnetic sensors, primarily for discrimination of objects as opposed to initial detection. These magnetic sensors, then, must fit within very small cost, size, and power budgets to be compatible with the envisioned sensor suites. Also, a high degree of sensitivity is required to minimize the number of sensor cells required to survey a given area in the field. Solid state magnetoresistive sensors, with their low cost, small size, and ease of integration, are excellent candidates for these applications assuming that their power and sensitivity performance are acceptable. SDT devices have been fabricated into prototype magnetic field sensors suitable for use in micro unattended ground sensor networks. They are housed in tiny SOIC 8-pin packages and mounted on a circuit board with required voltage regulation, signal amplification and conditioning, and sensor control and communications functions. The best sensitivity results to date are 289 pT/rt. Hz at 1 Hz, and and 7 pT/rt. Hz at f > 10 kHz. Expected near term improvements in performance would bring these levels to approximately 10 pT/rt Hz at 1 Hz and approximately 1 pT/rt. Hz at > 1 kHz.

Paper Details

Date Published: 27 September 2001
PDF: 8 pages
Proc. SPIE 4393, Unattended Ground Sensor Technologies and Applications III, (27 September 2001); doi: 10.1117/12.441263
Show Author Affiliations
Mark Tondra, NVE Corp. (United States)
Catherine A. Nordman, NVE Corp. (United States)
Erik H. Lange, NVE Corp. (United States)
Daniel Reed, NVE Corp. (United States)
Albrect Jander, NVE Corp. (United States)
Seraphin Akou, NVE Corp. (United States)
James Daughton, NVE Corp. (United States)

Published in SPIE Proceedings Vol. 4393:
Unattended Ground Sensor Technologies and Applications III
Edward M. Carapezza, Editor(s)

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