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Proceedings Paper

Purifying of Ar gas in the InSb film sputtering fabrication process
Author(s): Chengsong Sun; Liwei Wang; Yongguang Wei; Yanxia Guan; Lijun Zhou
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Paper Abstract

The film's sputtering fabrication has a lot of advantages than other technique. But it meets some difficulty in fabricating InSb film and the oxidation of In is one of them. Because the In among InSb is a kind of active element, and oxygen is in a ionogenic state in sputtering process, the In among InSb is easily oxidized. It will result in that InSb film loses its Hall effect. By analysis, we can find that the oxygen in vacuums mainly comes from the minimal oxygen among Ar gas. The spongy Ti absorbing in high temperature purifying technique was tested then. The temperature should be controlled at 900 degrees C. The purified effect won't be ideal if the temperature is low. The experimental result had been taken Auger electronic spectrum measure and the measured results are presented. The result indicate that the InSb film will not have O2 if use the Ar gas that had been purified. The results is perfect.

Paper Details

Date Published: 14 September 2001
PDF: 4 pages
Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440237
Show Author Affiliations
Chengsong Sun, Shenyang Univ. of Technology (China)
Liwei Wang, Shenyang Univ. of Technology (United States)
Yongguang Wei, Shenyang Univ. of Technology (China)
Yanxia Guan, Shenyang Univ. of Technology (China)
Lijun Zhou, Shenyang Univ. of Technology (China)


Published in SPIE Proceedings Vol. 4414:
International Conference on Sensor Technology (ISTC 2001)

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