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Proceedings Paper

Fabrication and etching processes of silicon-based PZT thin films
Author(s): Hongjin Zhao; Yanxiang Liu; Jianshe Liu; Tian-Ling Ren; Li-Tian Liu; Zhijian Li
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Paper Abstract

Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

Paper Details

Date Published: 14 September 2001
PDF: 4 pages
Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440229
Show Author Affiliations
Hongjin Zhao, Tsinghua Univ. (China)
Yanxiang Liu, Tsinghua Univ. (China)
Jianshe Liu, Tsinghua Univ. (China)
Tian-Ling Ren, Tsinghua Univ. (China)
Li-Tian Liu, Tsinghua Univ. (China)
Zhijian Li, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 4414:
International Conference on Sensor Technology (ISTC 2001)

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