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Proceedings Paper

Negative-resistance characteristics studies in silicon double injection p+ pi n+ magnetic device
Author(s): Dianzhong Wen
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Paper Abstract

A new p+) (pi) n+ structure of silicon magnetic device is designed, using Lampert model and the Ashley- Milnes Space-Charge regime model analyzed double injection space-charge-limited current negative-resistance characteristic in p+ (pi) n+ structure of silicon magnetic device. Some useful approximate formulas and experimental results are also presented. The analysis gives results which closely represents practical situations.

Paper Details

Date Published: 14 September 2001
PDF: 5 pages
Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440216
Show Author Affiliations
Dianzhong Wen, Heilongjiang Univ. (China)


Published in SPIE Proceedings Vol. 4414:
International Conference on Sensor Technology (ISTC 2001)

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