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Proceedings Paper

FEA modeling of a thermally excited silicon-beam resonant pressure sensor
Author(s): Deyong Chen; Dafu Cui; Li Wang; Zhongyao Yu; Zheng Cui; Shanhong Xia
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Paper Abstract

FEA modeling of a thermally-excited silicon beam resonant pressure sensor is presented. The sensor consists of two bonded silicon chips, one with an etched beam and another with an etched diaphragm. FEA modeling is carried out on temperature distribution, resonant frequency shift due to thermal stress, effect of heater/detector elements on the natural resonance frequency, design of diaphragm geometry, and sensitivity of pressure measurement. The resonant pressure sensor samples are realized by silicon micromachining are measured. There is a satisfactory agreement between theory and experiments.

Paper Details

Date Published: 14 September 2001
PDF: 4 pages
Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440192
Show Author Affiliations
Deyong Chen, Institute of Electronics (China)
Dafu Cui, Institute of Electronics (China)
Li Wang, Institute of Electronics (China)
Zhongyao Yu, Institute of Electronics (China)
Zheng Cui, Institute of Electronics (United Kingdom)
Shanhong Xia, Institute of Electronics (China)

Published in SPIE Proceedings Vol. 4414:
International Conference on Sensor Technology (ISTC 2001)

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