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Proceedings Paper

CO2 laser doping of Si layers with use of B2O3 as an effective procedure for increasing the sensitivity of detectors in security systems
Author(s): Wladyslaw Proszak; Olexander Bonchyk; Stepan Kiyak; Zenon Gotral
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Paper Abstract

This paper presents results of researches related with solid state doping of Si layers with use CO2 laser irradiation and B203 dopant. Unique properties of laser doping process let us create 10-100 nm doped layers of repeatable parameters.

Paper Details

Date Published: 24 August 2001
PDF: 4 pages
Proc. SPIE 4535, Optical Sensing for Public Safety, Health, and Security, (24 August 2001); doi: 10.1117/12.438441
Show Author Affiliations
Wladyslaw Proszak, Technical Univ. of Rzeszow (Poland)
Olexander Bonchyk, Institute for Applied Problems of Mechanics and Mathematics (Ukraine)
Stepan Kiyak, Institute for Applied Problems of Mechanics and Mathematics (Ukraine)
Zenon Gotral, Lviv Polytechnic State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4535:
Optical Sensing for Public Safety, Health, and Security

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