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Proceedings Paper

High-performance InGaAs PIN and APD (avalanche photdiode) detectors for 1.54 um eyesafe rangefinding
Author(s): Gregory H. Olsen; Donald A. Ackley; J. Hladky; James Spadafora; K. M. Woodruff; M. Kazakia; Brian T. Van Orsdel; Stephen R. Forrest; Yue Liu
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Paper Abstract

The structure and device properties of indium gallium arsenide (InGaAs) pin photodiodes and avalanche photodiodes (APDs) are described. Quantum efficiencies above 85% at 1.54 micrometers , dark current densities near 1 (mu) A/cm2 (-5 V, 300 K) and 3 mm diameter shunt resistances (10 mV, 300 K) above 10 megohms have been observed. Avalanche gains above 20 have been measured with multiplied primary dark currents below 7 nA. Extended wavelength InxGa1-xAs (.53 < x < .80) pin detectors are also described with 70% quantum efficiency and room temperature RoA products above 2000 ohm -cm2 at 1.8 micrometers , 900 ohm -cm2 at 2.1 micrometers and 15 ohm -cm2 at 2.6 micrometers .

Paper Details

Date Published: 1 April 1991
PDF: 8 pages
Proc. SPIE 1419, Eyesafe Lasers: Components, Systems, and Applications, (1 April 1991); doi: 10.1117/12.43843
Show Author Affiliations
Gregory H. Olsen, EPITAXX, Inc. (United States)
Donald A. Ackley, EPITAXX, Inc. (United States)
J. Hladky, EPITAXX, Inc. (United States)
James Spadafora, EPITAXX, Inc. (United States)
K. M. Woodruff, EPITAXX, Inc. (United States)
M. Kazakia, EPITAXX, Inc. (United States)
Brian T. Van Orsdel, EPITAXX, Inc. (United States)
Stephen R. Forrest, Univ. of Southern California (United States)
Yue Liu, Univ. of Southern California (United States)

Published in SPIE Proceedings Vol. 1419:
Eyesafe Lasers: Components, Systems, and Applications
Anthony M. Johnson, Editor(s)

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