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Proceedings Paper

Simulation of image quality issues at low k1 for 100-nm lithography
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Paper Abstract

Mask quality issues in pushing lithography to features below 0.5(lambda) /NA are identified and quantified through simulation of mask interactions and images. Guidelines summarize the results from detailed studies of aberrations, phase-shift mask image imbalance, 3D phase defects and EUV buried defects. Programmed-probe based aberration targets are extended to distinguish both even and odd lens aberrations and their mask tolerance requirements are assessed. Complex diffraction coefficients and results for cross-talk simulation are used to set guidelines for phase-shifting mask design. An antireflection coating (50 nm MoO3) is shown to reduce cross-talk between trenches. Type, location and size data are given for 3D phase-defects and the end regions of lines are shown to be more vulnerable to CD variation. Results for buried 3D Gaussian defects in EUV multilayers show a worst isolated defect size of half of the resolution and that 2nm high defects of any size can be tolerated.

Paper Details

Date Published: 5 September 2001
PDF: 8 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438395
Show Author Affiliations
Andrew R. Neureuther, Univ. of California/Berkeley (United States)
Konstantinos Adam, Univ. of California/Berkeley (United States)
Shoji Hotta, Univ. of California/Berkeley (Japan)
Thomas V. Pistor, Univ. of California/Berkeley (United States)
Garth Robins, Univ. of California/Berkeley (United States)
Yunfei Deng, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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