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Proceedings Paper

Utilization of assisting features in contact-hole mask repair
Author(s): Chia-Yang Chang; Chung-Hsing Chang; Chuan-Yuan Lin; C. C. Hung; Chin-Hsiang Lin; John C.H. Lin
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Paper Abstract

The present study aims to evaluate the utilization of assisting features in the contact-hole mask repair. Several different types of assisting features were considered, including positive serifs, constant bias, assisting bars, and assisting dimples. In brief, a test mask was fabricated to render various extent of quartz damage using a focused- ion beam mask repair tool, followed by adding assisting features. The repaired contact holes were examined first by AIMS 193 (193 nm aerial image measurement system) for their optical transmission, critical dimension (CD), and exposure- defocus window (ED). Figure 1 and 2 illustrate some preliminary results acquired from AIMS 193. As revealed from Figure 2, the center of the exposure-defocus window is shifted by variant extend with adding different types of assisting features. Wafer printed results would be used to further verify AIMS 193 observation. Optical simulation results of these repaired holes with assistant features will also be presented using Solid C simulation tool.

Paper Details

Date Published: 5 September 2001
PDF: 9 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438392
Show Author Affiliations
Chia-Yang Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chung-Hsing Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chuan-Yuan Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
C. C. Hung, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chin-Hsiang Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
John C.H. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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