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Proceedings Paper

CF4/O2 plasma simulation and comparison with quartz etch experiment
Author(s): Han-Ming Wu; Long He; Jeff N. Farnsworth; Gang Liu
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Paper Abstract

In order to study the behavior of fluorine based CF4/O2 plasma in an inductively coupled plasma (ICP) reactor, 2-D axisymmetric simulations are carried out by using Plasmator. The modeling results have provided the spatial distributions of some important plasma and neutral species in the dry etch process. It is found that the prevailing species of the plasma is CF3+ ion. The negative ion density has been proved not significant in the current process. To find the effects of mass flow rate and ICP power, three examples have been calculated. Based on the assumption of that the etch rate is proportional to the ion flux, the comparison between the simulation results and experimental data has been conducted. The results of the trend agree reasonably well. The model paves a way to find the direction of design optimization for plasma etch process experiments.

Paper Details

Date Published: 5 September 2001
PDF: 9 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438386
Show Author Affiliations
Han-Ming Wu, Intel Corp. (United States)
Long He, Intel Corp. (United States)
Jeff N. Farnsworth, Intel Corp. (United States)
Gang Liu, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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