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Proceedings Paper

Mask blanks warpage at 130-nm node
Author(s): Nobuyoshi Deguchi; Kazunori Iwamoto; Izumi Tsukamoto; Ryo Takai; Mitsuru Hiura
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Paper Abstract

Semiconductor device technology is now making transition from 150 to 130 nm node. Lithography tools for 130 node that employ KrF and ArF as light sources have finished being developed. Also, mask drawing and inspection tools are ready. However, for actual processes, there is an issue to be solved from realistic DOF or overlay accuracy acquisition point of view.

Paper Details

Date Published: 5 September 2001
PDF: 8 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438385
Show Author Affiliations
Nobuyoshi Deguchi, Canon Inc. (Japan)
Kazunori Iwamoto, Canon Inc. (Japan)
Izumi Tsukamoto, Canon Inc. (Japan)
Ryo Takai, Canon Inc. (Japan)
Mitsuru Hiura, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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