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Proceedings Paper

Stencil masks for electron-beam projection lithography
Author(s): Kenji Kurihara; H. Iriguchi; A. Motoyoshi; T. Tabata; S. Takahashi; K. Iwamoto; Ikuo Okada; Hideo Yoshihara; Hitoshi Noguchi
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Paper Abstract

Stencil masks for electron-beam projection lithography (EPL), in particular, for low-energy electron beam proximity projection lithography (LEEPL), have been developed using diamond membrane. The diamond membrane gives the masks high rigidity and high thermal conductivity, features which are very effective for obtaining high patterning accuracy. The mask blank is a 4-inch silicon wafer deposited with a diamond film with a thickness of less than 1micrometers . An electron beam mask writer with a 100-kV variable shaped beam is used to form absorber patterns on a hard mask for diamond etching. The diamond is etched by oxygen reactive ion etching to obtain vertical sidewalls. We have successfully fabricated a LEEPL stencil mask with a membrane size of 30 mm x 30 mm, which is larger than a conventional EPL mask. The etched sidewall is very smooth, and we demonstrate 50 to 70-nm line-and-space patterns.

Paper Details

Date Published: 5 September 2001
PDF: 8 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438383
Show Author Affiliations
Kenji Kurihara, NTT Advanced Technology Corp. (Japan)
H. Iriguchi, NTT Advanced Technology Corp. (Japan)
A. Motoyoshi, NTT Advanced Technology Corp. (Japan)
T. Tabata, NTT Advanced Technology Corp. (Japan)
S. Takahashi, NTT Advanced Technology Corp. (Japan)
K. Iwamoto, NTT Advanced Technology Corp. (Japan)
Ikuo Okada, NTT Advanced Technology Corp. (Japan)
Hideo Yoshihara, NTT Advanced Technology Corp. (Japan)
Hitoshi Noguchi, Shin-Etsu Chemical Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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