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Proceedings Paper

Up-to-date activities of PXL (proximity x-ray lithography)
Author(s): Yasuji Matsui; Takao Taguchi; Yoshinori Nakayama; Yukiko Kikuchi; Shinji Tsuboi; Hiroaki Sumitani
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Paper Abstract

PXL technologies in Japan have highly improved during the period of ASET program. A newly developed EB writer and the writing processes achieved accuracy of image-placement <10nm and CD uniformity <7nm(3(sigma) ). Together with the improvement of absorber materials, X-ray masks required for the 100nm technical node were fabricated and those for 70nm node are within achievable levels. The alignment accuracy about 20nm and the use of magnification correction have verified the overlay accuracy <30nm, which is sufficient to 100nm node. BY improving the alignment accuracy, the exposure of 70nm node may be possible by using the present stepper. Furthermore, the next generation system with shorter wavelength may open the door for 50nm node and below.

Paper Details

Date Published: 5 September 2001
PDF: 9 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438381
Show Author Affiliations
Yasuji Matsui, Association of Super-Advanced Electronics Technologies (Japan)
Takao Taguchi, Association of Super-Advanced Electronics Technologies (Japan)
Yoshinori Nakayama, Association of Super-Advanced Electronics Technologies (Japan)
Yukiko Kikuchi, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Tsuboi, Association of Super-Advanced Electronics Technologies (Japan)
Hiroaki Sumitani, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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