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Proceedings Paper

Laser proximity correction for advanced mask manufacturing
Author(s): Michael Chang; A. Yu; J. Chen; J. Lin; Jason H. Huang; F. Hsu; Hua-Yu Liu
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Paper Abstract

In this paper, we present a fully automatic mask laser proximity effect (LPE) correction in compliance with existing mask data preparation (MDP) flow to enable ALTA3000 0.18micrometers mask production capability that is at least one generation beyond its current application. The production- proven OPC methodology in wafer houses for many years has been integrated with CATS, the de facto standard product for preparing IC data for mask manufacturing, to correct mask process distortion. Excellent LPE correction results have been obtained repeatedly on 0.18micrometers test and production maks on an ALTA3000 that was originally designed for 0.35micrometers production.

Paper Details

Date Published: 5 September 2001
PDF: 7 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438377
Show Author Affiliations
Michael Chang, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
A. Yu, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
J. Chen, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
J. Lin, Toppan Chunghwa Electronics Co., Ltd. (Taiwan)
Jason H. Huang, Numerical Technologies, Inc. (United States)
F. Hsu, Numerical Technologies, Inc. (United States)
Hua-Yu Liu, Numerical Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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