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Proceedings Paper

Simulation of EUVL mask defect printability
Author(s): Manhyoung Ryoo; Masaaki Ito; Byoung Taek Lee; Taro Ogawa; Shinji Okazaki
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Paper Abstract

In this study, mask simulations were performed at the extreme ultraviolet wavelength of 13.5nm to determine criteria for the uniformity of the reflectivity of mask blanks and the printability of clear- and opaque-type absorber defects in order to obtain satisfactory lithographic performance. The simulations were performed on typical 70-nm line-and-space patterns for different flares and numerical apertures (NA) of the illumination. The simulation results for a numerical aperture of 0.1 and 18% flare showed that local variations in the reflectivity of multilayer mask blanks must be kept below 1% for practical lithography. It was also found that clear flank defects are even less printable than opaque ones. The results indicate that there is a large enough process margin for the repair of opaque flank defects, though the possibility still exists that the reflectivity of multilayer may drop during repair.

Paper Details

Date Published: 5 September 2001
PDF: 7 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438371
Show Author Affiliations
Manhyoung Ryoo, Association of Super-Advanced Electronics Technologies (South Korea)
Masaaki Ito, Association of Super-Advanced Electronics Technologies (Japan)
Byoung Taek Lee, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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