Share Email Print

Proceedings Paper

Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser
Author(s): Y. J. Yang; Thaddeus G. Dziura; S. C. Wang; Mr. Rowell Fernandez; G. Du; Shyh Wang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A GaAs single quantum well mushroom structure surface emitting laser with a threshold current as low as 1.6 mA and a large output power of 2.0 mW operating at continuous wave (CW) room temperature condition is reported. The sample was grown by molecular beam epitaxy (MBE) and mainly consisted of a 300 $ANS GaAs single quantum well as an active layer cladded by two AlAs/Al0.1Ga0.9As multilayers as the top and bottom mirrors. The devices were fabricated by chemical mesa etching and undercutting to form a mushroom structure. A low series resistance of 250 ohms was obtained on devices with a 10 X 10 micrometers 2 constricted active region using a selective zinc diffusion. The laser operated at 860 nm with a spectral linewidth of approximately 0.5 angstroms.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43836
Show Author Affiliations
Y. J. Yang, Lockheed Palo Alto Research Lab. (United States)
Thaddeus G. Dziura, Lockheed Palo Alto Research Lab. (United States)
S. C. Wang, Lockheed Palo Alto Research Lab. (Taiwan)
Mr. Rowell Fernandez, Lockheed Palo Alto Research Lab. (United States)
G. Du, Univ. of California/Berkeley (United States)
Shyh Wang, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

© SPIE. Terms of Use
Back to Top