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Proceedings Paper

Effect of clear field ratio on critical dimension in the dry etching process
Author(s): Chul-Joong Lee; Hyun-Suk Bang; J. W. Choi; H. S. Jung; Cheol Shin; Hong-Seok Kim
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Paper Abstract

To improve the resolution and fidelity of the small size patterns as device nodes less than 0.18micrometers , mask makers is required to apply dry etch process. But with applying this process we would experience some problems which aren't happened on wet etching process like small-circled chrome defects, CD Mean to Target variation according to Clear Field Ratio and so on. Of all these barriers this paper is willing to handle with the desired CD Mean to Target control against Clear Field Ratio. In not only mask making but wafers the CD control is one of the most important factors to get good devices. With understanding of CD variation on Clean Field Ratio on each layers it can help for us to estimate macro loading effect and improve CD MTT by adjusting dose accurately or the desired develop recipes before dry etching application for high-end devices.

Paper Details

Date Published: 5 September 2001
PDF: 5 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438357
Show Author Affiliations
Chul-Joong Lee, DuPont Photomasks Korea Ltd. (South Korea)
Hyun-Suk Bang, DuPont Photomasks Korea Ltd. (South Korea)
J. W. Choi, DuPont Photomasks Korea Ltd. (South Korea)
H. S. Jung, DuPont Photomasks Korea Ltd. (South Korea)
Cheol Shin, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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