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Proceedings Paper

Dry etching of Cr layer and its loading effect
Author(s): Hyuk-Joo Kwon; D. S. Min; Pil-Jin Jang; Byung-Soo Chang; Boo-Yeon Choi; Kyung Ho Park; Soo-Hong Jeong
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Paper Abstract

The Cr etch rate is affected by Cr density to be etched at the photomask and the Cr loading effect has become main obstacles to overcome for the next generation photomask process. Different mask-to-mask and within-mask pattern densities have made difficult to control the final CD (critical dimension). We have tested loading effect using binary Cr mask with ZEP7000 (3000 angstroms) photoresist. The loading effect was evaluated for the masks fabricated at the same process condition with the different mask-to-mask Cr loading and different within-mask Cr loading. The CD variations of dark field and clear field were observed and the phenomenological approach was proposed for the loading effect by some simplified equations.

Paper Details

Date Published: 5 September 2001
PDF: 8 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438355
Show Author Affiliations
Hyuk-Joo Kwon, PKL (South Korea)
D. S. Min, PKL (South Korea)
Pil-Jin Jang, PKL (South Korea)
Byung-Soo Chang, PKL (South Korea)
Boo-Yeon Choi, PKL (South Korea)
Kyung Ho Park, PKL (South Korea)
Soo-Hong Jeong, PKL (South Korea)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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