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Proceedings Paper

Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction
Author(s): Chris A. Mack
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Paper Abstract

GHOST uses two exposures, the primary dose and its complement, in an attempt to equalize the effects of backscattering and reduce proximity effects. Unfortunately, image contrast is reduced compared to exposures done without GHOST. A simplified raster scan theory is developed in order to examine the effects of backscattering and GHOST proximity correction on the quality of the images produced. Electron beam lithography simulation is used to examine the effect of spot size and voltage on the spot image generated in 400 nm of ZEP 7000 resist, and the effects of GHOST on proximity effects and process latitude.

Paper Details

Date Published: 5 September 2001
PDF: 10 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438354
Show Author Affiliations
Chris A. Mack, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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