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Proceedings Paper

Application of chemically amplified resist to 10-keV e-beam system
Author(s): Sung-Hee Ahn; Chang-Hwan Kim; Seung-Hune Yang; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Paper Abstract

Chemically amplified resists (CAR) which are widely used in KrF lithography are recently employed to e-beam mask making for its high sensitivity and high performance. The high sensitivity of CAR is attractive in a 50keV variable shaped e-beam system for reducing heating effect and improving throughput problems. As the device shrinkage is accelerated, superior mask process has highly been requested in the 10keV system as well. To cope with these requests, the feasibility of a CAR in a 10keV e-beam system has been investigated through comparison with a typical resist for 10keV, PBS. The difference of each resist potentiality between CAR and PBS results in a contrast superiority. As CAR uses an aqueous developer, the development induced error can be reduced owing to its good develop stability and a high evaporation heat. As a result, more accurate CD control can be achieved. The CD linearity and dose margin with the CAR are comparable to or better than those with the PBS. It is concluded that the CAR has various advantages over PBS and can supersede the PBS in a 10keV e-beam system.

Paper Details

Date Published: 5 September 2001
PDF: 7 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438348
Show Author Affiliations
Sung-Hee Ahn, Samsung Electronics Co., Ltd. (South Korea)
Chang-Hwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Seong-Yong Moon, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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