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Proceedings Paper

Fabry-Perot-type antireflective coating for deep-ultraviolet binary photomask application
Author(s): Hsuen-Li Chen; Chien-Kui Hsu; Ben-Chang Chen; Fu-Hsiang Ko; Tiao-Yuan Huang; Tien-Chi Chu
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Paper Abstract

In this paper, we demonstrated a novel anti-reflective coating structure for deep ultraviolet binary mask, which is based on three-layer Fabry-Perot Structure. The anti- reflective coating structure is composed of the chrome/oxide/chrome stack. By adding different optimized structures, reflectance of less than 2% at both 248nm and 193nm have been achieved. The results are also agreed well with simulated ones. At the three-layer Fabry-Perot structure, the thickness of bottom chrome layer should be larger than 100 nm to provide suitable absorption. By controlling the thickness of the intermediate oxide layer, we can tune the minimum reflection regime to the desired exposure wavelength. The thickness of top chrome layer should be well controlled in order to optimize transmission light into Fabry-Perot structures. In general, the mask layer should have good electrical conductivity for e-beam writing in order to prevent writing errors due to charging effects. In the Fabry-Perot structure, the top metal layer can also prevent charge accumulation during e-beam writing.

Paper Details

Date Published: 5 September 2001
PDF: 10 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438347
Show Author Affiliations
Hsuen-Li Chen, National Nano Device Labs. (Taiwan)
Chien-Kui Hsu, National Tsing Hua Univ. (Taiwan)
Ben-Chang Chen, National Nano Device Labs. (Taiwan)
Fu-Hsiang Ko, National Nano Device Labs. (Taiwan)
Tiao-Yuan Huang, National Nano Device Labs. (Taiwan)
Tien-Chi Chu, National Tsing Hua Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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