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Proceedings Paper

Prediction of MEEF using a simple model and MEEF enhancement parameters
Author(s): Dong-Hoon Chung; Seung-Hune Yang; Hyung-Do Kim; In-Gyun Shin; Yong-Hoon Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Paper Abstract

In low k1 optical-lithography generation, there is a non- linear amplification of mask critical dimension (CD) error during image transferring on a wafer. This error factor is called mask error enhancement factor (MEEF). In ArF system, it is premature to use commercialized simulation softwares and ArF resists. To evaluate the real resist system, we made a simple model that uses aerial images. Through the simulation, we calculated MEEFs for 180nm and 130nm line/space pairs in KrF resist system and compared them with experimental MEEFs to obtain the resist blur that satisfies the current experimental MEEFs. With a current KrF resist system, the resist blur is ~0.05 micrometers . In case of ArF resist system, the resist blur is a more important factor in MEEF and must be suppressed to lower than 0.05 micrometers to meet the proper process margin.

Paper Details

Date Published: 5 September 2001
PDF: 7 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438343
Show Author Affiliations
Dong-Hoon Chung, Samsung Electronics Co., Ltd. (South Korea)
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Hyung-Do Kim, Samsung Electronics Co., Ltd. (South Korea)
In-Gyun Shin, Samsung Electronics Co., Ltd. (South Korea)
Yong-Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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