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Proceedings Paper

Development of bilayered TaSiOx-HTPSM: II
Author(s): Toshifumi Yokoyama; S. Yusa; T. Okamura; H. Nakagawa; Toshiaki Motonaga; Hiroshi Mohri; Junji Fujikawa; Naoya Hayashi
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Paper Abstract

TaSiOx shifter has been developed for HT-PSM for ArF and F2 laser lithography. Adopting bilayered structure and embedding an etch-stop function into the transmittance control layer enable us to fabricate a TaSiOx-HT without quartz damage and to control the phase precisely. And less impact of TaSiOx shifter etching to CD was confirmed. It was confirmed this TaSiOx-HT was inspected by conventional inspection system without any problem.

Paper Details

Date Published: 5 September 2001
PDF: 8 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438338
Show Author Affiliations
Toshifumi Yokoyama, Dai Nippon Printing Co., Ltd. (Japan)
S. Yusa, Dai Nippon Printing Co., Ltd. (Japan)
T. Okamura, Dai Nippon Printing Co., Ltd. (Japan)
H. Nakagawa, Dai Nippon Printing Co., Ltd. (Japan)
Toshiaki Motonaga, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Junji Fujikawa, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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