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Proceedings Paper

Fabricating 100-nm line patterns with high-transmittance ArF attenuated phase-shift masks
Author(s): Haruo Iwasaki; Shinji Ishida; K. Tonai; Hiroshi Nozue
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Paper Abstract

We have studied the optical proximity effect, the depth of focus (DOF) and the mask-error-enhancement factor (MEF) of ArF attenuated phase shift masks (att. PSMs) for the application to 100-nm logic gate patterns. In the previous work, we have compared the performances of the binary mask with those of the 6% transmittance ArF att. PSM for printing 100-nm lines, and we obtained the better performances on the att. PSM with the annular illumination. In this paper, we reported the evaluation results of the higher transmittance att. PSMs. We fabricated them with 6-20% transmittance (quartz reference). Those masks have TaSiO bi-layer shifter with two tones. We did not use assist bars. An ArF scanner with NA 0.60 and a positive chemically amplified ArF resist with the thickness of 0.4 um are used. 100 nm semi-dense lines with a pitch of 250 nm are exposed without bias and 100 nm isolated lines are exposed with biases of 5 -15 nm (on wafer). Our results show that the higher transmittance att. PSMs can improve the DOF and the MEF on both semi-dense lines and isolated lines. In our experiments, the highest transmittance of 20% gives the broadest DOF of 0.4 um and the smallest MEF of 1.78 and 1.11 for semi-dense lines and isolated lines respectively. However, some higher transmittance PSMs may create the side lobes on the large patterns. From these results, we demonstrated that that 10% transmittance is suitable for the ArF att. PSMs for the fabrication of 100 nm line patterns.

Paper Details

Date Published: 5 September 2001
PDF: 13 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438333
Show Author Affiliations
Haruo Iwasaki, NEC Corp. (Japan)
Shinji Ishida, NEC Corp. (Japan)
K. Tonai, NEC Corp. (Japan)
Hiroshi Nozue, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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