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Proceedings Paper

GaAs/GaAlAs integrated optoelectronic transmitter for microwave applications
Author(s): Daniel Yap; Authi A. Narayanan; Steven E. Rosenbaum; Chia-Shing Chou; W. W. Hooper; R. Wong Quen; Robert H. Walden
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Paper Abstract

A monolithically integrated optoelectronic transmitter is being developed for wideband microwave-modulated links. The transmitter is designed to operate at signal frequencies of several gigahertz. It combines a GaAs/GaAlAs ridge-waveguide laser with a GaAs MESFET driver circuit. The laser has one of its cavity mirrors formed by dry etching so that the die size of the transmitter is not limited to the laser cavity length. The single-stage driver circuit is matched to both the low impedance of the laser and the 50 (Omega) microwave input by the inclusion of reactive components. A single-growth, vertically integrated material structure is used. Potential step-coverage problems that might result from this vertical integration are avoided by the use of air-bridge connections. The submicrometer FET gates are formed by direct-write electron-beam lithography.

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43832
Show Author Affiliations
Daniel Yap, Hughes Research Labs. (United States)
Authi A. Narayanan, Hughes Research Labs. (United States)
Steven E. Rosenbaum, Hughes Research Labs. (United States)
Chia-Shing Chou, Hughes Research Labs. (United States)
W. W. Hooper, Hughes Research Labs. (United States)
R. Wong Quen, Hughes Research Labs. (United States)
Robert H. Walden, Hughes Research Labs. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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