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Proceedings Paper

Progress of surface-emitting lasers in Japan
Author(s): Mutsuo Ogura
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Paper Abstract

The present states of the vertical cavity surface emitting lasers (SELDs) in Japan conducted by the Tokyo Institute of Technology, Sanyo Electric Co. Ltd., Furukawa Electric Co. Ltd., Seiko-Epson Corp. and Electrotechnical Lab. are outlined. Most of the lasers use the semiconductive distributed Bragg reflector and buried heterostructure (BH) either for the active region or whole optical cavity. Combination of the SELD and thyristor by NEC Corp. for the optical functional device was also introduced. Lateral injection SELDs will be another choice for the multiple quantum well structure and reduction of the series resistance. Regrowth and processing techniques developed in Japan which may be applicable for the more optimized design of SELDs are also discussed.

Paper Details

Date Published: 1 July 1991
PDF: 10 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43826
Show Author Affiliations
Mutsuo Ogura, Electrotechnical Lab. (Japan)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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