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Proceedings Paper

High-power diffraction-limited phase-locked GaAs/GaAlAs laser diode array
Author(s): Yueqing Zhang; Xitian Zhang; You Zhi Piao; Dian-en Li; Sheng Li Wu; Shu-qin Du
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Paper Abstract

High power diffraction-limited GaAs/GaAlAs phase-locked laser diode arrays are developed and fabricated by LPE technique, standard photolithographic technique, wet etching and proton bombardment. The tailored gain-guided arrays are carried out by varying width of channel of laser, while the spacing between lasers remains constant. This array consists of six lasers. Its optical output power per facet is 300 mW at 2.7Ith, single mode cw operation, single lobe far-field pattern with FWHM 1.9 degree(s).

Paper Details

Date Published: 1 July 1991
PDF: 4 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43825
Show Author Affiliations
Yueqing Zhang, Changchun Institute of Physics (China)
Xitian Zhang, Changchun Institute of Physics (China)
You Zhi Piao, Changchun Institute of Physics (China)
Dian-en Li, Changchun Institute of Physics (China)
Sheng Li Wu, Changchun Institute of Physics (China)
Shu-qin Du, Changchun Institute of Physics (China)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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