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Proceedings Paper

100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays
Author(s): Takao Yamaguchi; Keiichi Yodoshi; Kimihide Minakuchi; Norio Tabuchi; Yasuyuki Bessho; Yasuaki Inoue; Koji Komeda; Kazushi Mori; Atsushi Tajiri; Koji Tominaga
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Paper Abstract

Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 micrometers - thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 micrometers -spaced neighboring elements is only 1.0% at 100 mW.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43823
Show Author Affiliations
Takao Yamaguchi, Sanyo Electric Co., Ltd. (Japan)
Keiichi Yodoshi, Sanyo Electric Co., Ltd. (Japan)
Kimihide Minakuchi, Sanyo Electric Co., Ltd. (Japan)
Norio Tabuchi, Sanyo Electric Co., Ltd. (Japan)
Yasuyuki Bessho, Sanyo Electric Co., Ltd. (Japan)
Yasuaki Inoue, Sanyo Electric Co., Ltd. (Japan)
Koji Komeda, Sanyo Electric Co., Ltd. (Japan)
Kazushi Mori, Sanyo Electric Co., Ltd. (Japan)
Atsushi Tajiri, Sanyo Electric Co., Ltd. (Japan)
Koji Tominaga, Sanyo Electric Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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